sot223 npn silicon planar medium power high gain transistor issue 4 ? february 1997 features * 250 volt v ceo * gain of 500 at i c =100ma * very low saturation voltage applications * darlington replacement * battery powered circuits partmarking detail ? FZT696B absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 180 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 0.5 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 180 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 180 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =140v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.2 0.2 0.25 v v v i c =50ma, i b =0.5ma* i c =100ma, i b =2ma* i c =200ma, i b =5ma* base-emitter saturation voltage v be(sat) 0.9 v i c =200ma, i b =5ma* base-emitter turn-onvoltage v be(on) 0.9 v i c =200ma, v ce =5v* static forward current transfer ratio h fe 500 150 i c =100ma, v ce =5v* i c =200ma, v ce =5v* transition frequency f t 70 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 6pfv ce =10v, f=1mhz switching times t on t off 80 4400 ns ns i c =100ma, i b1 =10ma i b2 =10ma, v cc =50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT696B FZT696B 3 - 227 c c e b 3 - 228 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v o l ts) v ce(sat) v i c i c - collector current (amps) v - (v o l ts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no r m a l i se d ga in v - (v o l ts) v - (v o l ts) 1.5k 1k 500 h - t ypi ca l ga i n t amb =25c -55c +25c +100c +175c 0 0 -55c +25c +100c +175c v ce =5v i c /i b =50 i c /i b =50 v ce =5v i c /i b =10 i c /i b =100 i c /i b =50 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 1000v 0.001
sot223 npn silicon planar medium power high gain transistor issue 4 ? february 1997 features * 250 volt v ceo * gain of 500 at i c =100ma * very low saturation voltage applications * darlington replacement * battery powered circuits partmarking detail ? FZT696B absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 180 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 0.5 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 180 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 180 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =140v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.2 0.2 0.25 v v v i c =50ma, i b =0.5ma* i c =100ma, i b =2ma* i c =200ma, i b =5ma* base-emitter saturation voltage v be(sat) 0.9 v i c =200ma, i b =5ma* base-emitter turn-onvoltage v be(on) 0.9 v i c =200ma, v ce =5v* static forward current transfer ratio h fe 500 150 i c =100ma, v ce =5v* i c =200ma, v ce =5v* transition frequency f t 70 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 6pfv ce =10v, f=1mhz switching times t on t off 80 4400 ns ns i c =100ma, i b1 =10ma i b2 =10ma, v cc =50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT696B FZT696B 3 - 227 c c e b 3 - 228 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v o l ts) v ce(sat) v i c i c - collector current (amps) v - (v o l ts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no r m a l i se d ga in v - (v o l ts) v - (v o l ts) 1.5k 1k 500 h - t ypi ca l ga i n t amb =25c -55c +25c +100c +175c 0 0 -55c +25c +100c +175c v ce =5v i c /i b =50 i c /i b =50 v ce =5v i c /i b =10 i c /i b =100 i c /i b =50 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 1000v 0.001
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